近期，西安电子科技大学郝跃院士团队张进成教授课题组在超宽禁带半导体氧化镓（Ga₂O₃）射频器件研究中取得重要突破，创造了该类型器件性能的新纪录：最高振荡频率达90 GHz，在6 GHz频率下输出功率密度达到4.1 W/mm，并首次展现了氧化镓射频器件的低噪声潜力—在8 GHz下最小噪声系数仅为0.48 dB。 该成果以“Heterogeneous integration of ultrawide ...

By Li Yinong, SFC, 21st Century Business HeraldEditor’s Note: As the world moves toward 2026, multiple economic cycles and structural shifts are converging. Global growth remains uneven, inflation and ...