Researchers present 3 DICE IFF designs with transistor interleaving, the CnRx construct, and the guard gate technique at the 22 nm FD SOI technology node. April 25th, 2022 - By: Technical Paper Link ...

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...

The previous article examined the concept of logic gates. They can be made from discrete and active electronic components, although today logic gates are available within integrated circuits. In this ...

A logic gate is an electronic component (or set of them) that performs a logic operation, in which the binary values 0 and 1 are represented with two different voltage values, as seen in the previous ...